The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

二极管激光侧泵浦单横模100Hz电光调Q激光器

介绍了二极管激光侧泵浦单横模１００Ｈｚ电光调Ｑ激光器的实验结果。泵浦源为一个线阵准连续１００Ｗ二极管激光器，激光工作介质为ＮｄＹＡＧ薄梯形板条，板条与泵浦源间用柱透镜耦合，ＫＤ＊Ｐ电光晶体调Ｑ。在１００Ｈｚ重复频率下，获得单脉冲能量２．３７ｍＪ，脉宽小于７ｎｓ，光束质量因子Ｍ２＝１．１的１．０６μｍ激光，光－光效率为８．５％，斜效率为１８．７％。     

激光二极管自混合干涉和微振动的实验观测

介绍了利用LabView软件虚拟示波器和信号源,对激光二极管自混合干涉和微振动进行的实验观测.该实验可以作为本科低年级学生的综合设计实验.     

Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities

Physical aspects of an operation of the GaAs-based InGaAs/GaAs quantum-well (QW) VCSELs with the intentionally detuned optical cavities have been considered in the present paper using the comprehensive three-dimensional self-consistent optical–electrical–thermal-gain simulation. In GaAs-based structures, very good DBR resonator mirrors and a very efficient methods to confine radially both the current spreading and the electromagnetic field with the aid of oxide apertures may be applied. It has been found using the above simulation that even currently available immature technology enables manufacturing the above devices emitting radiation of wavelengths over 1.20 μm. In particular, while the room-temperature 1.30-μm lasing emission is still beyond possibilities of the InGaAs/GaAs QW VCSELs, these structures may offer analogous 1.25-μm emission, especially for the high-power and/or high-temperature operation.     

LD泵浦Nd：BGO晶体的自调Q激光器

首次实现了ＬＫ泵浦Ｎｄ∶ＢＧＯ固体激光器的１．０６４μｍ的激光输出，泵浦阈值功率为２５ｍＷ，在连续运转状态下得到最大为４０ｍＷ的ＴＥＭ００模输出，光－光效率为１３．３％，根据法拉第磁光效庆理论，了ＬＤ泵浦Ｎｄ∶ＢＧＯ自调Ｑ激光器的各种参数，并研制成该激光器，在该器件中，作为损耗调制元件的磁光调制器就是绕有线圈的Ｎｄ∶ＢＧＯ晶体本身，实验在重复率为１ＫＨｚ的条件下得到了ＦＷＨＭ为１００ｎｓ的稳定脉冲     

Low-threshold interband cascade lasers operating above room temperature

Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm² and a continuous wave output power of 140 mW/facet was obtained.     

Resonant-cavity-enhanced photodetectors and LEDs in the mid-infrared

In this paper we outline the use of resonant-cavity enhancement for increasing the exterior coupling efficiency of photodetectors and light-emitting diodes (LEDs) in the mid-infrared (MIR) spectral region. This method is potentially very important in the MIR because encapsulation is not presently feasible due to the lack of suitable materials. Among other potential applications, resonant-cavity-enhanced (RCE) photodetectors and LEDs could be particularly suitable for greenhouse gas detection because of their ‘pre-tunable’ spectrally narrowed resonantly enhanced peaks. We also present the optical characterization of an InAs RCE photodetector aimed at the detection of methane gas (λ≈3.3 μm), and an InAs/InAs_0.91Sb_0.09 resonant-cavity LED (RCLED) aimed at carbon dioxide gas (λ≈4.2 μm). The high peak responsivity of the RCE photodetector was 34.7 A/W at λ=3.14 μm, and the RCLED peaked at λ=3.96 μm. These are among the longest operating wavelengths for III–V RCE photodetectors and RCLEDs reported in the literature.     

固体激光器的灯泵浦和二极管泵浦方式比较

对固体激光器的灯泵浦和二极管泵浦方式进行了比较,详细分析了不同类型的固体激光器所适用的泵浦方式.指出二极管泵浦固体激光器是今后固体激光器的发展趋势.     

激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

10-GHz Optical Comb in L-Band Region With Brillouin/Erbium-Doped Fibre Laser

A multiwavelength Brillouin/erbium fibre laser (BEFL) which operates in the long wavelength (L-band) region is demonstrated for potential applications in an L-band wavelength division multiplexing (WDM) communication system. The laser configuration consists of a long erbium-doped fibre to enable L-band amplification where two 3-dB couplers take a portion of the generated BEFL signal and re-inject it into the single mode fibre to seed a cascaded BEFL line in the same direction as the first BEFL line. A stable and strong laser comb of up to five lines with 10-GHz spacing has been obtained with a Brillouin pump (BP) of 9.2 mW and a 980 nm pump of 92 mW. The BEFL has shown a broad tuning range with a tuning characteristic for line #1 which is flat over a range greater than 9.9 nm.